? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t j = 25c to 150c 1200 v v cgr t j = 25c to 150c, r ge = 1m 1200 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c ( chip capability ) 230 a i c110 t c = 110c 82 a i lrms t c = 25c ( lead rms limit ) 120 a i cm t c = 25c, 1ms 500 a i a t c = 25c 41 a e as t c = 25c 750 mj ssoa v ge = 15v, t vj = 125c, r g = 2 i cm = 164 a (rbsoa) clamped inductive load v ce < v ces p c t c = 25c 1250 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062 in.) from case for 10 260 c m d mounting torque ( ixgk ) 1.13/10 nm/lb.in. f c mounting force ( ixgx ) 20..120/4.5..14.6 n/lb. weight to-264 10 g plus247 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ce = 0v 1200 v v ge(th) i c = 1ma, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 50 a t j = 125 c, note 1 5 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = i c110 , v ge = 15v, note 2 2.70 3.20 v t j = 125c 2.64 v ds100155(05/09) genx3 tm 1200v igbts ixgk82n120b3 IXGX82N120B3 v ces = 1200v i c110 = 82a v ce(sat) 3.20v high-speed low-vsat pt igbts for 3 - 20 khz switching g = gate e = emitter c = collector tab = collector (tab) to-264 (ixgk) e g c e plus247 tm (ixgx) g c (tab) e advance technical information features z optimized for low conduction and switching losses z square rbsoa z high avalanche capability z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z smps z pfc circuits z welding machines z lamp ballasts
ixys reserves the right to change limits, test conditions, and dimensions. ixgk82n120b3 IXGX82N120B3 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 2 35 60 s c ies 7900 pf c oes v ce = 25v, v ge = 0v, f = 1 mhz 640 pf c res 170 pf q g(on) 350 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 50 nc q gc 150 nc t d(on) 30 ns t ri 77 ns e on 5.0 mj t d(off) 210 ns t fi 100 180 ns e off 3.3 6.2 mj t d(on) 32 ns t ri 80 ns e on 6.8 mj t d(off) 240 ns t fi 520 ns e off 7.1 mj r thjc 0.10 c/w r thck 0.15 c/w inductive load, t j = 25c i c = 80a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 inductive load, t j = 125c i c = 80a, v ge = 15v v ce = 0.5 ? v ces , r g = 2 note 3 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) plus247 tm (ixgx) outline to-264 (ixgk) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. notes: 1. part must be heatsunk for high-temp ices measurement. 2. pulse test, t 300 s; duty cycle, d 2%. 3. switching times & energy losses may increase for higher v ce (clamp), t j or r g .
? 2009 ixys corporation, all rights reserved ixgk82n120b3 IXGX82N120B3 fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 0.00.51.01.52.02.53.03.54.04.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 320 0 2 4 6 8 101214161820 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v 5v fig. 3. output characteristics @ 125oc 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 -50-25 0 255075100125150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 164a i c = 82a i c = 41a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 164 a t j = 25oc 41 a 82 a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 3.54.04.55.05.56.06.57.07.58.08.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. ixgk82n120b3 IXGX82N120B3 ixys ref: g_82n120b3h1(8t)5-14-09 fig. 11. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 11. maximum transient thermal impedance fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 100 0 20 40 60 80 100 120 140 160 180 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 1000 1100 1200 v ce - volts i c - amperes t j = 125oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 300 350 q g - nanocoulombs v ge - volts v ce = 600v i c = 82a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2009 ixys corporation, all rights reserved ixgk82n120b3 IXGX82N120B3 fig. 12. inductive switching energy loss vs. gate resistance 3 4 5 6 7 8 9 10 11 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms e off - millijoules 2 3 4 5 6 7 8 9 10 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 15. inductive turn-off switching times vs. gate resistance 300 350 400 450 500 550 600 650 700 2 3 4 5 6 7 8 9 10 11 12 13 14 15 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 700 800 900 t d(off) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 7 8 9 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 9 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 8 9 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 1 2 3 4 5 6 7 8 9 10 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 80a i c = 40a fig. 16. inductive turn-off switching times vs. collector current 0 100 200 300 400 500 600 700 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t f i - nanoseconds 150 200 250 300 350 400 450 500 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 0 100 200 300 400 500 600 700 800 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 180 200 220 240 260 280 300 320 340 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a, 80a
ixys reserves the right to change limits, test conditions, and dimensions. ixgk82n120b3 IXGX82N120B3 ixys ref: g_82n120b3h1(8t)5-14-09 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 20 25 30 35 40 45 50 55 60 65 70 75 80 i c - amperes t r i - nanoseconds 22 24 26 28 30 32 34 36 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v t j = 125oc, 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 30 40 50 60 70 80 90 100 110 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 22 24 26 28 30 32 34 36 38 40 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 600v i c = 40a i c = 80a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 23456789101112131415 r g - ohms t r i - nanoseconds 20 30 40 50 60 70 80 90 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 600v i c = 40a i c = 80a
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